Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions

ABSTRACT

The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.

TECHNICAL FIELD

[0001] The invention pertains to methods of forming semiconductorconstructions, and pertains to the constructions themselves. Inparticular aspects, the invention pertains to methods of formingelectrical contacts and/or methods of forming capacitor constructions.

BACKGROUND OF THE INVENTION

[0002] One type of semiconductor construction is a metal-insulator-metal(MIM) capacitor construction. A fragment 10 of a semiconductor structureis illustrated in FIG. 1, and such shows an exemplary MIM capacitorconstruction 20. More specifically, fragment 10 comprises a substrate 12having a conductively-doped diffusion region 14 therein. Substrate 12can comprise, for example, monocrystalline silicon. To aid ininterpretation of the claims that follow, the terms “semiconductivesubstrate” and “semiconductor substrate” are defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

[0003] Conductively-doped diffusion region 14 can be doped with one orboth of n-type and p-type dopant.

[0004] A conductive pedestal 16 is supported by substrate 12, and formedin electrical connection with diffusion region 14. Pedestal 16 cancomprise metal and/or conductively doped silicon. In particular aspects,pedestal 16 will comprise, consist essentially of, or consist ofconductively-doped silicon such as, for example, conductively-dopedpolycrystalline silicon.

[0005] An insulative mass 18 is formed over substrate 12 and aroundpedestal 16. Alternatively, pedestal 16 can be considered to extendthrough mass 18 and to the diffusion region 14 formed within substrate12. Mass 18 can comprise, for example, borophosphosilicate glass (BPSG).

[0006] A first capacitor electrode 22 and barrier 24 extend within anopening in insulative material 18 to electrically contact pedestal 16.First capacitor electrode 22 will comprise a metal in a MIMconstruction, and can comprise, for example, one or more of platinum,rhodium, ruthenium, titanium, tantalum and tungsten. Barrier layer 24can comprise, for example, titanium nitride, tantalum nitride, and/ortantalum silicon nitride.

[0007] An insulative material 26 is formed over capacitor electrode 22.Material 26 can comprise, for example, one or more of aluminum oxide(Al₂O₃), tantalum pentoxide, barium strontium titanate (BST), leadzirconate titanate (PZT), and/or lead lanthanum zirconate titanate(PLZT).

[0008] Barrier layer 24 is provided to alleviate and/or preventcross-diffusion of materials from dielectric 26 and conductive pedestal16. Specifically, silicon from a silicon-containing pedestal 16 canmigrate through conductive material 22, and oxygen from a dielectricmaterial 26 can also migrate through conductive material 22.

[0009] The migration of materials through conductive material 22 isthought to occur along grain boundaries. Specifically, material 22 willgenerally be formed as a layer, as shown, and will comprise columnargrains extending through the thickness of the layer and definingboundaries 23 between the grains. The boundaries 23 can, as shown,extend across an entirety of the thickness of material 22. Oxygen andsilicon are believed to be able to migrate along boundaries 23, andthereby pass through conductive material 22. Barrier layer 24 isprovided to block such migration through material 22.

[0010] A final component of structure 10 is a second capacitor electrode28 which is provided over dielectric material 26. Electrode 28 cancomprise any of various conductive materials, including, for example,the same conductive materials described above for incorporation into thefirst capacitor electrode 22.

[0011] Capacitor electrode 28 is capacitively separated from firstelectrode 22 by dielectric material 26. Accordingly, first electrode 22,dielectric material 26 and second electrode 28 together define at leasta portion of a capacitor construction.

[0012] It would be desirable to develop new methods for alleviating orpreventing diffusion through metal layers (such as, for example, thecapacitor electrode 22 metal layer of FIG. 1), and to incorporate suchmethods into formation of electrical contacts and/or capacitorconstructions.

SUMMARY OF THE INVENTION

[0013] In one aspect, the invention encompasses a method of forming anelectrical contact. A semiconductor substrate is provided, and aconductive node is formed to be supported by the semiconductorsubstrate. A first conductive material is formed over the conductivenode and shaped as a container. The container has an opening extendingtherein and an upper surface proximate the opening. The containeropening is at least partially filled with an insulative material. Asecond conductive material is formed over the at least partially filledcontainer opening and physically against the upper surface of thecontainer.

[0014] In one aspect, the invention encompasses a capacitorconstruction. The construction includes a semiconductor substratecomprising a silicon-containing surface. A first conductive material isover the silicon-containing surface and shaped as an upwardly-openingcontainer. The container has an upper surface proximate the opening. Afirst insulative material is within the container opening. A secondconductor material is over the container opening and physically againstthe upper surface of the container. A second insulative material is overthe second conductor material. A third conductive material is over thesecond insulative material. The third conductive material iscapacitively separated from the second conductive material by the secondinsulative material.

[0015] In one aspect, the invention encompasses a semiconductorconstruction. The construction includes a semiconductor substrate, and asilicon-containing electrically conductive node supported by thesemiconductor substrate. A first conductive layer is physically againsta surface of the conductive node and shaped as a container. The firstconductive layer has a first thickness and has grain boundariesextending across the first thickness. A second conductive layer is overthe container and physically against the upper surface of the container.The second conductive layer comprises a second thickness and has grainboundaries extending across the second thickness.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0017]FIG. 1 is a diagrammatic, cross-sectional view of a fragment of aprior art semiconductor construction, illustrating ametal-insulator-metal capacitor construction.

[0018]FIG. 2 is a diagrammatic, fragmentary, cross-sectional view of asemiconductor construction illustrating a preliminary stage of a methodof a particular aspect of the present invention.

[0019]FIG. 3 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 2.

[0020]FIG. 4 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 3.

[0021]FIG. 5 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 4.

[0022]FIG. 6 is a view of the. FIG. 2 fragment shown at a processingstage subsequent to that FIG. 5.

[0023]FIG. 7 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 6.

[0024]FIG. 8 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 7.

[0025]FIG. 9 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 3 in accordance with a second aspect ofthe invention.

[0026]FIG. 10 is a view of the FIG. 2 fragment shown at a processingstep subsequent to that of FIG. 9.

[0027]FIG. 11 is a view of the FIG. 2 fragment shown at a processingstage subsequent to that of FIG. 3 in accordance with a third aspect ofthe invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] An exemplary aspect of the invention is described with referenceto FIGS. 2-8. In referring to FIGS. 2-8, similar numbering will be usedas was utilized above in describing the prior art, where appropriate.

[0029] Referring initially to FIG. 2, a fragment of a semiconductorconstruction 100 is illustrated. The fragment comprises a semiconductorsubstrate 12 which can comprise, consist essentially of, or consist ofsilicon, and in particular cases can comprise monocrystalline siliconlightly-doped with an appropriate background dopant.

[0030] A conductively-doped diffusion region 14 is within semiconductivematerial substrate 12, and a conductive pedestal 16 is formed over andin electrical contact with diffusion region 14. Diffusion region 14 can,in particular applications, be a source/drain region associated with atransistor construction, and in such applications there would be atransistor gate (not shown) proximate diffusion region 14. Inapplications in which diffusion region 14 is a source/drain region of atransistor construction, it can be fabricated as part of a memory cellarray, such as, for example, a dynamic random access memory (DRAM) cellarray.

[0031] A pedestal 16 is formed over and in electrical contact withdiffusion region 14. Pedestal 16 can comprise, for example, metal, metalcompounds, and/or conductively-doped silicon. In particularapplications, pedestal 16 will comprise, consist essentially of, orconsist of conductively-doped silicon, such as, for example,conductively-doped polycrystalline silicon. In applications in whichpedestal 16 comprises conductively-doped silicon, the dopant can be oneor both of n-type dopant and p-type dopant. Pedestal 16 can be inphysical contact against conductively-doped diffusion region 14, asshown, or alternatively can be separated from diffusion region 14 byvarious intervening layers, which can include, for example, a metalsilicide layer (not shown). Pedestal 16 can be referred to as aconductive node supported by semiconductor substrate 12.

[0032] Pedestal 16 comprises an upper surface 17.

[0033] An insulative mass 18 is formed over semiconductor substrate 12and pedestal 16. Mass 18 can comprise, for example, BPSG.

[0034] Referring to FIG. 3, an opening 110 is formed into mass 18, andextends to upper surface 17 of node 16. Mass 18 comprises an uppersurface 19 proximate opening 110, and in the shown aspect of theinvention, surface 19 is an uppermost surface of insulative mass 18.

[0035] Referring to FIG. 4, a conductive material 112 is formed overmass 18 and within opening 110 to partially fill the opening. Conductivematerial 112 narrows opening 110 and forms a container-shape 114 withinthe opening. The container-shape opens upwardly within the opening 110,and a material 116 is formed over conductive material 112 and within theupwardly-opening container shape 114.

[0036] Conductive material 112 can be referred to as a first conductivematerial to distinguish the material from other conductive materialswhich can be subsequently formed over conductive material 112 in variousaspects of the invention (some of which are described below). Conductivematerial 112 can comprise, consist of, or consist essentially of one ormore of platinum, rhodium, ruthenium, iridium, titanium, tantalum andtungsten; and in particular aspects can comprise, consist of, or consistessentially of one or more of rhodium oxide, ruthenium oxide, iridiumoxide, titanium nitride, titanium boronitride, tantalum nitride,tantalum boronitride, platinum/rhodium, titanium aluminum nitride, andtungsten nitride.

[0037] Conductive material 112 has a thickness 115, and has columnargrains therein, with grain boundaries 117 extending across the thickness115 (only some of the grain boundaries 117 are labeled).

[0038] Conductive material 112 is shown being formed physically againstupper surface 17 of pedestal 16. Accordingly, in embodiments in whichpedestal 16 comprises silicon, first conductive material 112 can beformed physically against the silicon.

[0039] First conductive material 112 can be formed by, for example,either physical vapor deposition or chemical vapor deposition. It can bepreferred to form conductive material 112 by physical vapor deposition,in order to obtain conformal coverage within opening 110.

[0040] The material 116 formed over conductive material 112 can be aninsulative material, and preferably is a material which can be a goodbarrier to silicon diffusion and/or oxygen diffusion. Suitable materialscan be selected from the group consisting of silicon nitride, siliconoxynitride, silicon carbide, silicon dioxide, and mixtures thereof.

[0041] First conductive material 112 can have a thickness of, forexample, from about 100 angstroms to about 300 angstroms, and material116 can be formed to a thickness of, for example from about 300angstroms to about 10,000 angstroms. Material 116 can be formed by, forexample, chemical vapor deposition.

[0042] Referring to FIG. 5, construction 100 is illustrated after beingexposed to a polishing condition which removes conductive material 112from over upper surface 19 of mass 18, while leaving material 112 withinthe opening 110 extending into mass 18. It is noted that some of mass 18can be removed during the polishing operation, and accordingly the uppersurface 19 of FIG. 5 can be at a lower elevational level than is theupper surface 19 of FIG. 4. In the shown aspect of the invention,materials 112 and 116 are both provided over mass 18 prior to thepolishing operation, and accordingly the polishing removes bothmaterials 112 and 116 from over mass 18. Suitable polishing cancomprise, for example, chemical-mechanical polishing. It is noted thatconductive material 112 can be removed from over surface 19 utilizing anetchback (such as, for example, a dry etchback) in addition to, oralternatively to, the polishing.

[0043] After the polishing, conductive material 112 defines anupwardly-opening container over conductive node 16, and such containercomprises uppermost surfaces 121 proximate the upwardly-facing openingwithin the container. Material 116 at least partially fills thecontainer opening, and in the shown embodiment entirely fills thecontainer opening. Material 116 has an upper surface 123.

[0044] In the shown aspect of the invention, the polishing has created aplanarized upper surface of mass 18, material 112, and material 116;with such planarized upper surface including surfaces 19, 121 and 123.

[0045] Referring to FIG. 6, an insulative mass 130 is formed acrosssurfaces 19, 121 and 123. Mass 130 can comprise, for example,borophosphosilicate glass.

[0046] Referring to FIG. 7, an opening 132 is formed through mass 130and to upper surfaces 121 of first conductive material 112. A secondconductive material 134 is formed within opening 132, and in the shownaspect of the invention, in physical contact with upper surfaces 121 offirst conductive material 112. Second conductive material 134 is alsoformed in physical contact with uppermost surface 123 of material 116 inthe shown aspect of the invention. Material 134 is shown as a layerhaving a thickness 135, and such thickness can be, for example, fromabout 100 angstroms to about 300 angstroms. Further, material 134 isshown having columnar grains and grain boundaries 137 extendingtherethrough (with only some of the grain boundaries 137 being labeled).

[0047] Material 134 can comprise the same materials described aboverelative to material 112. Accordingly, material 134 can comprise one ormore of platinum, iridium, rhodium, ruthenium, titanium, tantalum andtungsten. In particular applications, material 134 can comprise, consistessentially of, or consist of one or more of rhodium oxide, rutheniumoxide, iridium oxide, titanium nitride, titanium boronitride, tantalumnitride, tantalum boronitride, platinum/rhodium, titanium aluminumnitride, and tungsten nitride.

[0048] Material 134 can be formed by, for example, physical vapordeposition, chemical vapor deposition or atomic layer deposition. Inparticular aspects, it can be advantageous to form material 134 bychemical vapor deposition, as such can be more economical than physicalvapor deposition. It is noted that such is opposite to the discussionabove regarding formation of material 112, wherein it was indicated thatit can be advantageous to form material 112 by physical vapordeposition. The difference in preferred aspects for formation ofmaterials 112 and 134 is due to a difference in critical dimensions ofthe opening 110 (FIG. 3) that material 112 is formed in relative to theopening 132 that material 134 is formed in. The higher criticaldimension of opening 110 can render physical vapor depositionadvantageous relative to chemical vapor deposition, and the smallercritical dimension of opening 132 can render chemical vapor depositionmore advantageous than physical vapor deposition. Accordingly, inparticular aspects of the invention, materials 112 and 134 can besubstantially identical in composition (with the term “substantiallyidentical” indicating that there may be differences in minorconstituents or contaminants of the materials), but can be formed bydifferent deposition processes; with material 112 being formed byphysical vapor deposition and material 134 being formed by chemicalvapor deposition.

[0049] The formation of material 134 narrows opening 132, and forms anupwardly-opening container shape of material 134 within opening 132.

[0050] Referring to FIG. 8, material 134 is removed from an uppersurface of mass 130 by suitable processing, such as, for example,chemical-mechanical processing. Subsequently, an insulative material 26and a conductive material 20 are formed over material 134. Insulativematerial 26 can comprise, for example, a material selected from thegroup consisting of tantalum oxide, aluminum oxide (Al₂O₃), zirconiumoxide, hafnium oxide, hafnium-aluminum oxide, SBT, BST, PZT, PLZT, andmixtures thereof. Conductive material 20 can comprise, for example, thematerials described above form material 134. Accordingly, material 20can comprise, for example, one or more of platinum, rhodium, iridium,ruthenium, titanium, tantalum and tungsten. Material 134 canadditionally, or alternatively, comprise conductively-dopedsemiconductive material, such as, for example, conductively-dopedsilicon. In particular aspects, material 116 can be referred to as afirst insulative material, and material 26 can be referred to as asecond insulative material. Also, in particular aspects, conductivematerials 112, 134 and 20 can be referred to as first, second and thirdconductive materials, respectively. The second conductive material 134can be considered to be capacitively separated from third conductivematerial 20 by insulative material 26. Accordingly, materials 134, 26and 20 can be considered to together define a capacitor construction140.

[0051] Materials 112 and 116 can be together considered a barrierbetween conductive material 134 and a silicon-comprising surface 17 ofpedestal 16. Specifically, to the extent that oxygen diffusion frominsulative material 26 penetrates downwardly along grain boundaries 137,the oxygen is prevented from further migration by materials 116 and 112.Material 116 is preferably chosen to be a good barrier to oxygendiffusion, and material 112 is ultimately a good barrier due to thegrain boundaries 117 being oriented in the wrong direction to permitchanneling of oxygen through material 112 and to silicon-comprisingsurface 17. Further, materials 116 and 112 can prevent silicon migrationfrom pedestal 16 to insulative material 26. Specifically, material 116is preferably chosen to be a good barrier to silicon migration, so thatany silicon migrating from mass 16, through material 112 and to material116 is blocked from further migration. Further, grain boundaries 117 areoriented in the wrong direction along sidewalls of container 114 toprevent silicon migration directly through sidewalls of the containerdefined by material 112.

[0052] Material 112 can be considered a conductive electrical contactbetween the node defined by pedestal 16 and the capacitor electrodedefined by material 134, in particular aspects of the invention.

[0053] The particular thickness 142 of the barrier defined by layers 112and 116 can vary, with an exemplary suitable thickness being from about300 angstroms to about 10,000 angstroms. Further, the relative thickness144 of a container defined by material 134 to the thickness 142 canvary, and the shown diagrammatic illustration should not be understoodto imply a particular constraint on the relationship of the thicknesses.

[0054] Although the aspect of the invention described with reference toFIGS. 2-8 utilizes an electrical node 16 in the form of a pedestalformed over a diffusion region 14, it is to be understood that otherelectrical nodes can be utilized in various aspects of the invention.For instance, pedestal 16 can be eliminated, and layer 112 formeddirectly on the conductively-doped diffusion region 14.

[0055] The aspect described with reference to FIGS. 2-8 is but onesuitable method for forming a barrier comprising materials 112 and 116.Another method is described with reference to FIGS. 9 and 10. Inreferring to FIGS. 9 and 10, similar numbering will be utilized as wasused above in describing FIGS. 2-8, where appropriate.

[0056] Referring initially to FIG. 9, a fragment of a semiconductorconstruction 150 is illustrated. The fragment comprises a semiconductorsubstrate 12, a conductively-doped diffusion region 14, a pedestal 16,and an insulative mass 18, as described above with reference to theconstruction 100 of FIGS. 2-8. Insulative mass 18 has an opening 110extending therein. The construction 150 of FIG. 9 can comprise aprocessing stage subsequent to that described with reference to FIG. 3.

[0057] Conductive material 112 is formed across an upper surface 19 ofinsulative mass 18, and within opening 110. Conductive material 112 canbe formed utilizing the processing conditions described above withreference to FIG. 4. A difference between the processing stage of FIG. 9and that of FIG. 4 is that material 116 (FIG. 4) is not formed at theprocessing stage of FIG. 9.

[0058] Referring to FIG. 10, construction 150 is subjected to polishingwhich removes material 112 from over mass 18 and leaves the materialwithin opening 110. The material 112 within opening 110 defines anupwardly-opening container shape 114. The removal of material 112 fromover upper surface 19 of mass 18 can comprise, for example,chemical-mechanical polishing. After such polishing, material 116 isformed over mass 18, and within the container shape 114. Material 116can then be removed from over mass 18 by suitable processing, such as,for example, chemical-mechanical polishing to form a structure identicalto that illustrated in FIG. 5. The processing of FIGS. 6-8 can follow,to ultimately form the construction illustrated in FIG. 8. A differencebetween the methodology of FIGS. 9 and 10, and that described above withreference to FIGS. 2-8, is that material 116 is formed after polishingof material 112 in the processing sequence of FIGS. 9 and 10.

[0059] Another method of forming a barrier is described with referenceto a construction 300 in FIG. 11. In referring to FIG. 11, similarnumbering will be utilized as was used above in describing FIGS. 2-10,where appropriate. The construction of FIG. 11 can be considered tocorrespond to a processing stage subsequent to that of FIG. 3.

[0060] Construction 300 comprises a semiconductor substrate 12, aconductively-doped diffusion region 14, a pedestal 16, and an insulativemass 18, as described above with reference to the construction 100 ofFIGS. 2-8.

[0061] A conductive material 112 is formed over pedestal 16. Conductivematerial 112 comprises columnar grains separated by boundaries 117. Thecolumnar grains are illustrated as discrete grains in FIG. 11, relativeto the more diagrammatic illustrations of FIGS. 4-10, to illustrateparticular attributes of the grain structures of FIG. 11. Specifically,the grains extend inwardly from substrates adjacent opening 110 (FIG.3), and accordingly lower grains extend upwardly from a bottom of theopening while upper grains extend laterally from sidewalls of theopening. The grain structures of FIG. 11 can be formed utilizing atomiclayer deposition of material 112.

[0062] After formation of material 112, materials 26 and 20 are formedover the material 112. The laterally extending grain boundaries of theupper portion of material 112 can alleviate, and even prevent,cross-diffusion of species between pedestal 16 and insulative material26.

[0063] Construction 300 can be considered to comprise a conductive node16 supported by semiconductor substrate 12, and a first conductivematerial 112 over the conductive node. The first conductive materialcomprises a lower portion with vertically-extending grains and an upperportion with horizontally extending grains. Construction 300 alsocomprises a dielectric material 26 over the upper portion of the firstconductive material. The dielectric material is separated from the lowerportion of the first conductive material by the upper portion of thefirst conductive material. Construction 300 additionally comprises asecond conductive material 20 over the dielectric material. The secondconductive material is capacitively separated from the first conductivematerial by the dielectric material.

[0064] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming an electrical contact, comprising: providing asemiconductor substrate; forming a conductive node supported by thesemiconductor substrate; forming a first conductive material over theconductive node and shaped as a container, the container having anopening extending therein; at least partially filling the containeropening with an insulative material; and forming a second conductivematerial over the at least partially filled container opening and inconductive electrical connection with the first conductive material. 2.The method of claim 1 wherein the second conductive material is formedphysically against first conductive material.
 3. The method of claim 1wherein the first conductive material comprises an upper surface, andwherein the second conductive material is formed physically against theupper surface.
 4. The method of claim 1 wherein the conductive nodecomprises silicon, and wherein the first conductive material is formedphysically against the silicon of the conductive node.
 5. The method ofclaim 1 wherein the first conductive material is formed within anopening in an insulative mass by physical vapor deposition.
 6. Themethod of claim 1 wherein the first conductive material is formed withinan opening in an insulative mass by physical vapor deposition; andwherein the second conductive material is formed by chemical vapordeposition.
 7. The method of claim 1 wherein the first conductivematerial is formed within an opening in an insulative mass by chemicalvapor deposition.
 8. The method of claim 1 further comprising: formingan insulative mass over the conductive node; forming an opening into themass and to the conductive node, the mass having a surface proximate theopening; forming the first conductive material within the opening in themass to partially fill the opening in the mass and form the containershape within the opening in the mass; the first conductive materialbeing formed over the mass surface proximate the opening while beingformed in the opening in the mass; and polishing the first conductivematerial to remove the first conductive material from over the masssurface proximate the opening while leaving the first conductivematerial in the opening in the mass.
 9. The method of claim 8 whereinthe insulative material is provided within the container shape prior tothe polishing.
 10. The method of claim 8 wherein the insulative materialis provided within the container shape prior to the polishing; whereinthe insulative material is formed over the mass surface proximate theopening during the provision of the insulative material, and wherein thepolishing removes both the insulative material and the first conductivematerial from over the mass surface proximate the opening.
 11. Themethod of claim 8 wherein the insulative material is provided within thecontainer shape after the polishing.
 12. The method of claim 8 whereinthe polishing comprises chemical-mechanical polishing.
 13. The method ofclaim 8 wherein the first conductive material is formed within anopening in an insulative mass by physical vapor deposition.
 14. Themethod of claim 8 wherein the first conductive material is formed withinan opening in an insulative mass by physical vapor deposition; andwherein the second conductive material is formed by chemical vapordeposition.
 15. The method of claim 1 wherein the container opening isentirely filled with the insulative material.
 16. The method of claim 1wherein the first conductive material is substantially the same as thesecond conductive material.
 17. The method of claim 1 wherein the firstconductive material comprises one or more of platinum, rhodium, iridium,ruthenium, titanium, tantalum, and tungsten.
 18. The method of claim 1wherein the first conductive material comprises one or more of rhodiumoxide, ruthenium oxide, iridium oxide, titanium nitride, titaniumboronitride, tantalum nitride, tantalum boronitride, titanium aluminumnitride, and tungsten nitride.
 19. The method of claim 1 wherein thesecond conductive material comprises one or more of platinum, rhodium,iridium, ruthenium, titanium, tantalum, and tungsten.
 20. The method ofclaim 1 wherein the second conductive material comprises one or more ofrhodium oxide, ruthenium oxide, iridium oxide, titanium nitride,titanium boronitride, tantalum nitride, tantalum boronitride, titaniumaluminum nitride, and tungsten nitride.
 21. The method of claim 1wherein the insulative material is selected from the group consisting ofsilicon nitride, silicon oxynitride, silicon carbide, silicon dioxide,and mixtures thereof.
 22. A method of forming a semiconductorconstruction, comprising: providing a semiconductor substrate; forming asilicon-containing electrically conductive node supported by thesemiconductor substrate; forming a first conductive layer physicallyagainst a surface of the conductive node and shaped as a container; thefirst conductive layer having a first thickness and having columnargrain boundaries extending across the first thickness; the containerdefining an opening therein; at least partially filling the containeropening with a first insulative material; and forming a secondconductive layer over the at least partially filled container openingand physically against the upper surface of the container; the secondconductive layer comprising a second thickness and having columnar grainboundaries extending across the second thickness.
 23. The method ofclaim 22 wherein the first conductive layer is formed within an openingin an insulative mass by physical vapor deposition.
 24. The method ofclaim 22 wherein the first conductive layer is formed within an openingin an insulative mass by physical vapor deposition; and wherein thesecond conductive layer is formed by chemical vapor deposition.
 25. Themethod of claim 22 wherein the first conductive layer is formed withinan opening in an insulative mass by chemical vapor deposition.
 26. Themethod of claim 22 wherein the first conductive layer and secondconductive layer comprise substantially the same composition as oneanother.
 27. The method of claim 22 wherein the first conductive layercomprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 28. The method of claim 22 wherein thefirst conductive layer comprises one or more of rhodium oxide, rutheniumoxide, iridium oxide, titanium nitride, titanium boronitride, tantalumnitride, tantalum boronitride, titanium aluminum nitride, and tungstennitride.
 29. The method of claim 22 wherein the second conductive layercomprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 30. The method of claim 22 wherein thesecond conductive layer comprises one or more of rhodium oxide,ruthenium oxide, iridium oxide, titanium nitride, titanium boronitride,tantalum nitride, tantalum boronitride, titanium aluminum nitride, andtungsten nitride.
 31. The method of claim 22 further comprising forminga second insulative material over the second conductive layer; thesecond insulative material being selected from the group consisting ofaluminum oxide, tantalum oxide, BST, PZT, PLZT, and mixtures thereof.32. A method of forming a semiconductor construction, comprising:providing a semiconductor substrate; forming a silicon-containingelectrically conductive node supported by the semiconductor substrate;forming a first conductive material physically against a surface of theconductive node and shaped as a container, the container having anopening extending therein and an upper surface proximate the opening;the first conductive material comprising one or more of platinum,rhodium, iridium, ruthenium, titanium, tantalum, and tungsten; at leastpartially filling the container opening with a first insulativematerial; forming a second conductive material over the at leastpartially filled container opening and physically against the uppersurface of the container; the second conductive material comprising oneor more of platinum, rhodium, iridium, ruthenium, titanium, tantalum,and tungsten; and forming a second insulative material over the secondconductive material; the second insulative material being selected fromthe group consisting of aluminum oxide, tantalum oxide, BST, PZT, PLZT,and mixtures thereof.
 33. The method of claim 32 wherein the firstconductive material is formed within an opening in an insulative mass byphysical vapor deposition.
 34. The method of claim 32 wherein the firstconductive material is formed within an opening in an insulative mass byphysical vapor deposition; and wherein the second conductive material isformed by chemical vapor deposition.
 35. The method of claim 32 whereinthe first conductive material is formed within an opening in aninsulative mass by chemical vapor deposition.
 36. The method of claim 32wherein the first conductive material is substantially the same as thesecond conductive material.
 37. A method of forming a capacitorconstruction, comprising: providing a semiconductor substrate; forming aconductive node supported by the semiconductor substrate; forming afirst conductive material over the conductive node, the first conductivematerial comprising a lower portion with vertically-extending grains andan upper portion with horizontally extending grains; forming adielectric material over the upper portion of the first conductivematerial; the dielectric material being separated from the lower portionof the first conductive material by the upper portion of the firstconductive material; and forming a second conductive material over thedielectric material; the second conductive material being capacitivelyseparated from the first conductive material by the dielectric material.38. The method of claim 37 wherein the first conductive materialcomprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 39. The method of claim 37 wherein thefirst conductive material comprises one or more of rhodium oxide,ruthenium oxide, iridium oxide, titanium nitride, titanium boronitride,tantalum nitride, tantalum boronitride, titanium aluminum nitride, andtungsten nitride.
 40. The method of claim 37 wherein the secondconductive material comprises one or more of platinum, rhodium, iridium,ruthenium, titanium, tantalum, and tungsten.
 41. The method of claim 37wherein the second conductive material comprises one or more of rhodiumoxide, ruthenium oxide, iridium oxide, titanium nitride, titaniumboronitride, tantalum nitride, tantalum boronitride, titanium aluminumnitride, and tungsten nitride.
 42. The method of claim 37 wherein thedielectric material is selected from the group consisting of aluminumoxide, tantalum oxide, BST, PZT, PLZT, and mixtures thereof.
 43. Themethod of claim 37 wherein the first conductive material is formed byatomic layer deposition.
 44. A method of forming a capacitorconstruction, comprising: providing a semiconductor substrate comprisinga silicon-containing surface; forming a first conductive material overthe silicon-containing surface and shaped as an upwardly-openingcontainer, the container having an upper surface proximate the opening;at least partially filling the container opening with a first insulativematerial; forming a second conductive material over the at leastpartially filled container opening and physically against the uppersurface of the container; forming a second insulative material over thesecond conductive material; and forming a third conductive material overthe second insulative material; the third conductive material beingcapacitively separated from the second conductive material by the secondinsulative material.
 45. The method of claim 44 wherein the containeropening is entirely filled with the first insulative material.
 46. Themethod of claim 44 wherein the first conductive material comprises oneor more of platinum, rhodium, iridium, ruthenium, titanium, tantalum,and tungsten.
 47. The method of claim 44 wherein the first conductivematerial comprises one or more of rhodium oxide, ruthenium oxide,iridium oxide, titanium nitride, titanium boronitride, tantalum nitride,tantalum boronitride, titanium aluminum nitride, and tungsten nitride.48. The method of claim 44 wherein the second conductive materialcomprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 49. The method of claim 44 wherein thesecond conductive material comprises one or more of rhodium oxide,ruthenium oxide, iridium oxide, titanium nitride, titanium boronitride,tantalum nitride, tantalum boronitride, titanium aluminum nitride, andtungsten nitride.
 50. The method of claim 44 wherein the thirdconductive material comprises one or more of platinum, rhodium, iridium,ruthenium, titanium, tantalum, and tungsten.
 51. The method of claim 44wherein the first insulative material is selected from the groupconsisting of silicon nitride, silicon oxynitride, silicon carbide,silicon dioxide, and mixtures thereof.
 52. The method of claim 44wherein the second insulative material is selected from the groupconsisting of aluminum oxide, tantalum oxide, BST, PZT, PLZT, andmixtures thereof.
 53. The method of claim 44 wherein thesilicon-containing surface comprises conductively-doped silicon; andwherein the first conductive material is formed physically against theconductively-doped silicon of the silicon-containing surface.
 54. Asemiconductor construction, comprising: a semiconductor substrate; asilicon-containing electrically conductive node supported by thesemiconductor substrate; a first conductive layer physically against asurface of the conductive node and shaped as a container; the firstconductive layer having a first thickness and having columnar grainboundaries extending across the first thickness; and a second conductivelayer over the container and physically against the upper surface of thecontainer; the second conductive layer comprising a second thickness andhaving columnar grain boundaries extending across the second thickness.55. The construction of claim 54 wherein the first conductive layerthickness is from about 100 Å to about 300 Å.
 56. The construction ofclaim 54 wherein the second conductive layer thickness is from about 100Å to about 300 Å.
 57. The construction of claim 54 wherein the firstconductive layer comprises substantially the same composition as thesecond conductive layer.
 58. The construction of claim 54 wherein thefirst conductive layer comprises one or more of platinum, rhodium,iridium, ruthenium, titanium, tantalum, and tungsten.
 59. Theconstruction of claim 54 wherein the first conductive layer comprisesone or more of rhodium oxide, ruthenium oxide, iridium oxide, titaniumnitride, titanium boronitride, tantalum nitride, tantalum boronitride,titanium aluminum nitride, and tungsten nitride.
 60. The construction ofclaim 54 wherein the second conductive layer comprises one or more ofplatinum, rhodium, iridium, ruthenium, titanium, tantalum, and tungsten.61. The construction of claim 54 wherein the second conductive layercomprises one or more of rhodium oxide, ruthenium oxide, iridium oxide,titanium nitride, titanium boronitride, tantalum nitride, tantalumboronitride, titanium aluminum nitride, and tungsten nitride.
 62. Theconstruction of claim 54 wherein the container defines an openingtherein, and further comprising an insulative material within thecontainer opening.
 63. The construction of claim 62 wherein theinsulative material entirely fills the container opening.
 64. Theconstruction of claim 62 wherein the insulative material is selectedfrom the group consisting of silicon nitride, silicon oxynitride,silicon carbide, silicon dioxide, and mixtures thereof.
 65. Theconstruction of claim 54 further comprising an insulative material overthe second conductive layer and comprising a material selected from thegroup consisting of aluminum oxide, tantalum oxide, BST, PZT, PLZT, andmixtures thereof.
 66. A semiconductor construction, comprising: asemiconductor substrate; a silicon-containing conductive node supportedby the semiconductor substrate; a first conductive material physicallyagainst a surface of the conductive node and shaped as a container, thecontainer having an opening defined thereby; the first conductivematerial comprising one or more of platinum, rhodium, iridium,ruthenium, titanium, tantalum, and tungsten; a first insulative materialwithin the container opening; a second conductive material over thecontainer opening and physically against a surface of the container; thesecond conductive material comprising one or more of platinum, rhodium,iridium, ruthenium, titanium, tantalum, and tungsten; and a secondinsulative material over the second conductive material; the secondinsulative material being selected from the group consisting of aluminumoxide, tantalum oxide, BST, PZT, PLZT, and mixtures thereof.
 67. Theconstruction of claim 66 wherein the first conductive material issubstantially the same as the second conductive material.
 68. Theconstruction of claim 66 wherein the first insulative material isselected from the group consisting of silicon nitride, siliconoxynitride, silicon carbide, silicon dioxide, and mixtures thereof. 69.The construction of claim 66 wherein the first insulative material isselected from the group consisting of silicon nitride, siliconoxynitride, silicon carbide, silicon dioxide, and mixtures thereof; andwherein the first insulative material entirely fills the containeropening.
 70. A semiconductor construction, comprising: a semiconductorsubstrate; a conductive node supported by the semiconductor substrate; afirst conductive material physically against a surface of the conductivenode and shaped as an upwardly-opening container, the container havingan upper surface proximate the opening; an insulative material withinthe container opening; and a second conductive material over thecontainer opening and physically against the upper surface of thecontainer.
 71. The construction of claim 70 wherein the insulativematerial entirely fills the container opening.
 72. The construction ofclaim 70 wherein the first conductive material is substantially the sameas the second conductive material.
 73. The construction of claim 70wherein the first conductive material comprises one or more of platinum,rhodium, iridium, ruthenium, titanium, tantalum, and tungsten.
 74. Theconstruction of claim 70 wherein the first conductive material comprisesone or more of rhodium oxide, ruthenium oxide, iridium oxide, titaniumnitride, titanium boronitride, tantalum nitride, tantalum boronitride,titanium aluminum nitride, and tungsten nitride.
 75. The construction ofclaim 70 wherein the second conductive material comprises one or more ofplatinum, rhodium, iridium, ruthenium, titanium, tantalum, and tungsten.76. The construction of claim 70 wherein the second conductive materialcomprises one or more of rhodium oxide, ruthenium oxide, iridium oxide,titanium nitride, titanium boronitride, tantalum nitride, tantalumboronitride, titanium aluminum nitride, and tungsten nitride.
 77. Theconstruction of claim 70 wherein the insulative material is selectedfrom the group consisting silicon nitride, silicon oxynitride, siliconcarbide, silicon dioxide, and mixtures thereof.
 78. The construction ofclaim 70 wherein the electrical node comprises conductively-dopedsilicon.
 79. A capacitor construction, comprising: a semiconductorsubstrate; a conductive node supported by the semiconductor substrate; afirst conductive material over the conductive node, the first conductivematerial comprising a lower portion with vertically-extending grains andan upper portion with horizontally extending grains; a dielectricmaterial over the upper portion of the first conductive material; thedielectric material being separated from the lower portion of the firstconductive material by the upper portion of the first conductivematerial; and a second conductive material over the dielectric material;the second conductive material being capacitively separated from thefirst conductive material by the dielectric material.
 80. Theconstruction claim 79 wherein the first conductive material comprisesone or more of platinum, rhodium, iridium, ruthenium, titanium,tantalum, and tungsten.
 81. The method of claim 79 wherein the firstconductive material comprises one or more of rhodium oxide, rutheniumoxide, iridium oxide, titanium nitride, titanium boronitride, tantalumnitride, tantalum boronitride, titanium aluminum nitride, and tungstennitride.
 82. The method of claim 79 wherein the second conductivematerial comprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 83. The method of claim 79 wherein thesecond conductive material comprises one or more of rhodium oxide,ruthenium oxide, iridium oxide, titanium nitride, titanium boronitride,tantalum nitride, tantalum boronitride, titanium aluminum nitride, andtungsten nitride.
 84. The method of claim 79 wherein the dielectricmaterial is selected from the group consisting of aluminum oxide,tantalum oxide, BST, PZT, PLZT, and mixtures thereof.
 85. A capacitorconstruction, comprising: a semiconductor substrate comprising asilicon-containing surface; a first conductive material over thesilicon-containing surface and shaped as an upwardly-opening container,the container having an upper surface proximate the opening; a firstinsulative material within the container opening; a second conductivematerial over the container opening and physically against the uppersurface of the container; a second insulative material over the secondconductive material; and a third conductive material over the secondinsulative material; the third conductive material being capacitivelyseparated from the second conductive material by the second insulativematerial.
 86. The construction of claim 85 wherein the container isphysically against the silicon-containing surface and has a height fromthe silicon-containing surface to the container upper surface of fromabout 300 Å to about 10,000 Å.
 87. The construction of claim 85 whereinthe first insulative material entirely fills the container opening. 88.The construction of claim 85 wherein the first conductive materialcomprises one or more of platinum, rhodium, iridium, ruthenium,titanium, tantalum, and tungsten.
 89. The construction of claim 85wherein the first conductive material comprises one or more of rhodiumoxide, ruthenium oxide, iridium oxide, titanium nitride, titaniumboronitride, tantalum nitride, tantalum boronitride, titanium aluminumnitride, and tungsten nitride.
 90. The construction of claim 85 whereinthe second conductive material comprises one or more of platinum,iridium, rhodium, ruthenium, titanium, tantalum, and tungsten.
 91. Theconstruction of claim 85 wherein the second conductive materialcomprises one or more of titanium nitride, titanium boronitride,tantalum nitride, tantalum boronitride and tungsten nitride.
 92. Theconstruction of claim 85 wherein the third conductive material comprisesone or more of platinum, rhodium, iridium, ruthenium, titanium,tantalum, and tungsten.
 93. The construction of claim 85 wherein thefirst insulative material is selected from the group consisting ofsilicon nitride, silicon oxynitride, silicon carbide, silicon dioxide,and mixtures thereof.
 94. The construction of claim 85 wherein thesecond insulative material is selected from the group consisting ofaluminum oxide, tantalum oxide, BST, PZT, PLZT, and mixtures thereof.95. The construction of claim 85 wherein the silicon-containing surfacecomprises conductively-doped silicon; and wherein the first conductivematerial is formed physically against the conductively-doped silicon ofthe silicon-containing surface.